Chip on package structure and method

ABSTRACT

A system and method for packaging semiconductor device is provided. An embodiment comprises forming vias over a carrier wafer and attaching a first die over the carrier wafer and between a first two of the vias. A second die is attached over the carrier wafer and between a second two of the vias. The first die and the second die are encapsulated to form a first package, and at least one third die is connected to the first die or the second die. A second package is connected to the first package over the at least one third die.

This application is a continuation of U.S. patent application Ser. No.15/186,624, entitled “Chip on Package Structure and Method,” filed onJun. 20, 2016, which is a continuation of U.S. patent application Ser.No. 14/147,316, entitled “Chip on Package Structure and Method,” filedon Jan. 3, 2014, now U.S. Pat. No. 9,373,527 issued on Jun. 21, 2016,which claims the benefit of U.S. Provisional Application No. 61/897,695,entitled “InFO-Chip on Package Structure and Method,” filed on Oct. 30,2013, which applications are incorporated herein by reference.

BACKGROUND

Since the invention of the integrated circuit (IC), the semiconductorindustry has experienced rapid growth due to continuous improvements inthe integration density of various electronic components (i.e.,transistors, diodes, resistors, capacitors, etc.). For the most part,this improvement in integration density has come from repeatedreductions in minimum feature size, which allows more components to beintegrated into a given area.

These integration improvements are essentially two-dimensional (2D) innature, in that the volume occupied by the integrated components isessentially on the surface of the semiconductor wafer. Although dramaticimprovement in lithography has resulted in considerable improvement in2D IC formation, there are physical limits to the density that can beachieved in two dimensions. One of these limits is the minimum sizeneeded to make these components. Also, when more devices are put intoone chip, more complex designs are required.

In an attempt to further increase circuit density, three-dimensional(3D) ICs have been investigated. In a typical formation process of a 3DIC, two dies are bonded together and electrical connections are formedbetween each die and contact pads on a substrate. For example, oneattempt involved bonding two dies on top of each other. The stacked dieswere then bonded to a carrier substrate and wire bonds electricallycoupled contact pads on each die to contact pads on the carriersubstrate.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIGS. 1-15 describe a method and structure of packaging semiconductordevices in accordance with an embodiment; and

FIGS. 16A-16C disclose additional embodiments of chip on packagestructures in accordance with embodiments.

Corresponding numerals and symbols in the different figures generallyrefer to corresponding parts unless otherwise indicated. The figures aredrawn to clearly illustrate the relevant aspects of the embodiments andare not necessarily drawn to scale.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the presently preferred embodiments arediscussed in detail below. It should be appreciated, however, that thepresent invention provides many applicable inventive concepts that canbe embodied in a wide variety of specific contexts. The specificembodiments discussed are merely illustrative of specific ways to makeand use the invention, and do not limit the scope of the invention.

The present invention will be described with respect to preferredembodiments in a specific context, namely a semiconductor device withinan Chip on Package (CoP) structure. The invention may also be applied,however, to other packages.

With reference now to FIG. 1, there is shown a carrier substrate 101with a adhesive layer 103 and a polymer layer 105 over the adhesivelayer 103. The carrier substrate 101 comprises, for example, siliconbased materials, such as glass or silicon oxide, or other materials,such as aluminum oxide, combinations of any of these materials, or thelike. The carrier substrate 101 is planar in order to accommodate anattachment of semiconductor devices such as a first semiconductor device601 and a second semiconductor device 603 (not illustrated in FIG. 1 butillustrated and discussed below with respect to FIG. 6).

The adhesive layer 103 is placed on the carrier substrate 101 in orderto assist in the adherence of overlying structures (e.g., the polymerlayer 105). In an embodiment the adhesive layer 103 may comprise anultra-violet glue, which loses its adhesive properties when exposed toultra-violet light. However, other types of adhesives, such as pressuresensitive adhesives, radiation curable adhesives, epoxies, combinationsof these, or the like, may also be used. The adhesive layer 103 may beplaced onto the carrier substrate 101 in a semi-liquid or gel form,which is readily deformable under pressure.

The polymer layer 105 is placed over the adhesive layer 103 and isutilized in order to provide protection to, e.g., the firstsemiconductor device 601 and the second semiconductor device 603 oncethe first semiconductor device 601 and the second semiconductor device603 have been attached. In an embodiment the polymer layer 105 may bepolybenzoxazole (PBO), although any suitable material, such as polyimideor a polyimide derivative, may alternatively be utilized. The polymerlayer 105 may be placed using, e.g., a spin-coating process to athickness of between about 2 μm and about 15 μm, such as about 5 μm,although any suitable method and thickness may alternatively be used.

FIG. 2 illustrates the placement of a seed layer 201 over the polymerlayer 105. The seed layer 201 is a thin layer of a conductive materialthat aids in the formation of a thicker layer during subsequentprocessing steps. The seed layer 201 may comprise a layer of titaniumabout 1,000 Å thick followed by a layer of copper about 5,000 Å thick.The seed layer 201 may be created using processes such as sputtering,evaporation, or PECVD processes, depending upon the desired materials.The seed layer 201 may be formed to have a thickness of between about0.3 μm and about 1 μm, such as about 0.5 μm.

FIG. 3 illustrates a placement and patterning of a photoresist 301 overthe seed layer 201. In an embodiment the photoresist 301 may be placedon the seed layer 201 using, e.g., a spin coating technique to a heightof between about 50 μm and about 250 μm, such as about 120 μm. Once inplace, the photoresist 301 may then be patterned by exposing thephotoresist 301 to a patterned energy source (e.g., a patterned lightsource) so as to induce a chemical reaction, thereby inducing a physicalchange in those portions of the photoresist 301 exposed to the patternedlight source. A developer is then applied to the exposed photoresist 301to take advantage of the physical changes and selectively remove eitherthe exposed portion of the photoresist 301 or the unexposed portion ofthe photoresist 301, depending upon the desired pattern.

In an embodiment the pattern formed into the photoresist 301 is apattern for vias 401 (not illustrated in FIG. 3 but illustrated anddiscussed below with respect to FIG. 4). The vias 401 are formed in sucha placement as to be located on different sides of subsequently attacheddevices such as the first semiconductor device 601 and the secondsemiconductor device 603. However, any suitable arrangement for thepattern of vias 401, such as by being located such that the firstsemiconductor device 601 and the second semiconductor device are placedon opposing sides of the vias 401, may alternatively be utilized.

FIG. 4 illustrates a formation of the vias 401 within the photoresist301. In an embodiment the vias 401 comprise one or more conductivematerials, such as copper, tungsten, other conductive metals, or thelike, and may be formed, for example, by electroplating, electrolessplating, or the like. In an embodiment, an electroplating process isused wherein the seed layer 201 and the photoresist 301 are submerged orimmersed in an electroplating solution. The seed layer 201 surface iselectrically connected to the negative side of an external DC powersupply such that the seed layer 201 functions as the cathode in theelectroplating process. A solid conductive anode, such as a copperanode, is also immersed in the solution and is attached to the positiveside of the power supply. The atoms from the anode are dissolved intothe solution, from which the cathode, e.g., the seed layer 201, acquiresthe dissolved atoms, thereby plating the exposed conductive areas of theseed layer 201 within the opening of the photoresist 301.

FIG. 5 illustrates that, once the vias 401 have been formed using thephotoresist 301 and the seed layer 201, the photoresist 301 may beremoved using a suitable removal process. In an embodiment, a plasmaashing process may be used to remove the photoresist 301, whereby thetemperature of the photoresist 301 may be increased until thephotoresist 301 experiences a thermal decomposition and may be removed.However, any other suitable process, such as a wet strip, mayalternatively be utilized. The removal of the photoresist 301 may exposethe underlying portions of the seed layer 201.

FIG. 5 additionally illustrates a removal of exposed portions of theseed layer 201. In an embodiment the exposed portions of the seed layer201 (e.g., those portions that are not covered by the vias 401) may beremoved by, for example, a wet or dry etching process. For example, in adry etching process reactants may be directed towards the seed layer201, using the vias 401 as masks. Alternatively, etchants may be sprayedor otherwise put into contact with the seed layer 201 in order to removethe exposed portions of the seed layer 201. After the exposed portion ofthe seed layer 201 has been etched away, a portion of the polymer layer105 is exposed between the vias 401.

FIG. 6 illustrates a placement of the first semiconductor device 601 andthe second semiconductor device 603 onto the polymer layer 105 andwithin or between the vias 401. In an embodiment the first semiconductordevice 601 and the second semiconductor device 603 are electricallyconnected through, e.g., a redistribution layer (RDL) 901 (notillustrated in FIG. 6 but illustrated and discussed below with respectto FIG. 9) and may be utilized together in order to provide a desiredfunctionality to an end user. In an embodiment the first semiconductordevice 601 and the second semiconductor device 603 may be attached tothe polymer 105 using, e.g., an adhesive material, although any suitablemethod of attachment may alternatively be utilized.

In a particular embodiment, the second semiconductor device 603 may beformed with a more advanced technology node than the first semiconductordevice 601. By utilizing different technology nodes, the smaller sizesand faster capabilities of the more advanced technology node may be usedin the second semiconductor device 603 while also not requiring the useof the more expensive manufacturing processes in each component. Forexample, in one embodiment the second semiconductor device 603 may bemanufactured using a 16 nm technology node while the first semiconductordevice 601 may be manufactured with a 28 nm technology node. However,any suitable combination of technology nodes, also including using thesame technology node for both the first semiconductor device 601 and thesecond semiconductor device 603, may alternatively be utilized.

By using a more advanced technology node, the second semiconductordevice 603 may operate at a higher speed and with more processing powerthan the first semiconductor device 601. In a particular embodiment thesecond semiconductor device 603 may have an operating speed of greaterthan or equal to about 3 GHz. Additionally, the second semiconductordevice 603 may have a bus size greater than or equal to about 32 bits.

Additionally, other differences between the first semiconductor device601 and the second semiconductor device 603 may be utilized toefficiently leverage the benefits of each device (e.g., speed, cost,size, etc.). In another embodiment the second semiconductor device 603may be, e.g., a digital logic device used to perform logic functions.However, the first semiconductor device 601 may be partitioned into tworegions (not individually illustrated in FIG. 6) such as a digitalregion and an analog region. By using such a hybrid configuration, thefirst semiconductor device 601 and the second semiconductor device 603may be modified to provide the best structure for the desiredfunctionality.

The second semiconductor device 603 may comprise a first substrate,first active devices, first metallization layers, first contact pads,first passivation layers, and first external connectors. The firstsubstrate may comprise bulk silicon, doped or undoped, or an activelayer of a silicon-on-insulator (SOI) substrate. Generally, an SOIsubstrate comprises a layer of a semiconductor material such as silicon,germanium, silicon germanium, SOI, silicon germanium on insulator(SGOI), or combinations thereof. Other substrates that may be usedinclude multi-layered substrates, gradient substrates, or hybridorientation substrates.

The first active devices comprise a wide variety of active devices andpassive devices such as capacitors, resistors, inductors and the likethat may be used to generate the desired structural and functionalrequirements of the design for the second semiconductor device 603. Thefirst active devices may be formed using any suitable methods eitherwithin or else on the first substrate.

The first metallization layers are formed over the first substrate andthe first active devices and are designed to connect the various activedevices to form functional circuitry. In an embodiment the firstmetallization layers are formed of alternating layers of dielectric andconductive material and may be formed through any suitable process (suchas deposition, damascene, dual damascene, etc.). In an embodiment theremay be four layers of metallization separated from the first substrateby at least one interlayer dielectric layer (ILD), but the precisenumber of first metallization layers is dependent upon the design of thesecond semiconductor device 603.

The first contact pads may be formed over and in electrical contact withthe first metallization layers. The first contact pads may comprisealuminum, but other materials, such as copper, may alternatively beused. The first contact pads may be formed using a deposition process,such as sputtering, to form a layer of material (not shown) and portionsof the layer of material may then be removed through a suitable process(such as photolithographic masking and etching) to form the firstcontact pads. However, any other suitable process may be utilized toform the first contact pads. The first contact pads may be formed tohave a thickness of between about 0.5 μm and about 4 μm, such as about1.45 μm.

The first passivation layers may be formed on the first substrate overthe first metallization layers and the first contact pads. The firstpassivation layers may be made of one or more suitable dielectricmaterials such as silicon oxide, silicon nitride, low-k dielectrics suchas carbon doped oxides, extremely low-k dielectrics such as porouscarbon doped silicon dioxide, combinations of these, or the like. Thefirst passivation layers may be formed through a process such aschemical vapor deposition (CVD), although any suitable process may beutilized, and may have a thickness between about 0.5 μm and about 5 μm,such as about 9.25 KÅ.

The first external connectors may be formed to provide conductiveregions for contact between the first contact pads and, e.g., aredistribution layer 901 (not illustrated in FIG. 6 but illustrated anddescribed below with respect to FIG. 9). In an embodiment the firstexternal connectors may be conductive pillars and may be formed byinitially forming a photoresist (not shown) over the first passivationlayers to a thickness between about 5 μm to about 20 μm, such as about10 μm. The photoresist may be patterned to expose portions of the firstpassivation layers through which the conductive pillars will extend.Once patterned, the photoresist may then be used as a mask to remove thedesired portions of the first passivation layers, thereby exposing thoseportions of the underlying first contact pads to which the conductivepillars will make contact.

The conductive pillars may be formed within the openings of both thefirst passivation layers and the photoresist. The conductive pillars maybe formed from a conductive material such as copper, although otherconductive materials such as nickel, gold, or metal alloy, combinationsof these, or the like may also be used. Additionally, the conductivepillars may be formed using a process such as electroplating, by whichan electric current is run through the conductive portions of the firstcontact pads to which the conductive pillars are desired to be formed,and the first contact pads are immersed in a solution. The solution andthe electric current deposit, e.g., copper, within the openings in orderto fill and/or overfill the openings of the photoresist and the firstpassivation layers, thereby forming the conductive pillars. Excessconductive material and photoresist outside of the openings of the firstpassivation layer may then be removed using, for example, an ashingprocess, a chemical mechanical polish (CMP) process, combinations ofthese, or the like.

However, as one of ordinary skill in the art will recognize, the abovedescribed process to form the conductive pillars is merely one suchdescription, and is not meant to limit the embodiments to this exactprocess. Rather, the described process is intended to be merelyillustrative, as any suitable process for forming the first externalconnectors may alternatively be utilized. All suitable processes arefully intended to be included within the scope of the presentembodiments.

In an embodiment the first semiconductor device 601 comprises a secondsubstrate, second active devices, second metallization layers, secondcontact pads, second passivation layers, and second external connectors.Each of these elements may be similar to the first substrate, firstactive devices, first metallization layers, first contact pads, firstpassivation layers, and first external connectors as described abovewith respect to the second semiconductor device 603, although they mayalternatively be different if desired.

In addition to these elements that may be similar, the firstsemiconductor device 601 additionally includes a plurality of throughsilicon vias (TSVs) 605 that extend through the substrate of the firstsemiconductor device 601 so as to provide a quick passage of datasignals from a third semiconductor device 1301 (not illustrated in FIG.6 but illustrated and discussed below with respect to FIG. 13) to thesecond semiconductor device 603. In an embodiment, the firstsemiconductor device 605 may have, e.g., greater than about 1200 TSVs,although any suitable number may alternatively be utilized.

In an embodiment the through silicon vias may be formed by initiallyforming through silicon via (TSV) openings into the second substrate.The TSV openings may be formed by applying and developing a suitablephotoresist (not shown), and removing portions of the second substratethat are exposed to the desired depth. The TSV openings may be formed soas to extend into the second substrate at least further than the secondactive devices formed within and/or on the second substrate, and mayextend to a depth greater than the eventual desired height of the secondsubstrate. Accordingly, while the depth is dependent upon the overalldesigns, the depth may be between about 20 μm and about 200 μm from thesecond active devices on the second substrate, such as a depth of about50 μm from the second active devices on the second substrate.

Once the TSV openings have been formed within the second substrate, theTSV openings may be lined with a liner. The liner may be, e.g., an oxideformed from tetraethylorthosilicate (TEOS) or silicon nitride, althoughany suitable dielectric material may alternatively be used. The linermay be formed using a plasma enhanced chemical vapor deposition (PECVD)process, although other suitable processes, such as physical vapordeposition or a thermal process, may alternatively be used.Additionally, the liner may be formed to a thickness of between about0.1 μm and about 5 μm, such as about 1 μm.

Once the liner has been formed along the sidewalls and bottom of the TSVopenings, a barrier layer (also not independently illustrated) may beformed and the remainder of the TSV openings may be filled with firstconductive material. The first conductive material may comprise copper,although other suitable materials such as aluminum, alloys, dopedpolysilicon, combinations thereof, and the like, may alternatively beutilized. The first conductive material may be formed by electroplatingcopper onto a seed layer (not shown), filling and overfilling the TSVopenings. Once the TSV openings have been filled, excess liner, barrierlayer, seed layer, and first conductive material outside of the TSVopenings may be removed through a planarization process such as chemicalmechanical polishing (CMP), although any suitable removal process may beused.

Once the TSV openings have been filled, a backside of the secondsubstrate may be thinned to expose the TSV openings and form the TSVs605. In an embodiment the second substrate may be thinned using, e.g., aCMP and grinding process to remove the material of the second substrateas well as planarize the second substrate and the TSVs 605 once the TSVs605 have been exposed. Alterntively, one or more etching processes orother removal processes may also be used to remove material of thesecond substrate and to expose the TSVs 605.

Once exposed, third contact pads may be formed in connection with thenow exposed TSVs 605. In an embodiment the third contact pads maycomprise aluminum, but other materials, such as copper, mayalternatively be used. The third contact pads may be formed using adeposition process, such as sputtering, to form a layer of material (notshown) and portions of the layer of material may then be removed througha suitable process (such as photolithographic masking and etching) toform the third contact pads. However, any other suitable process may beutilized to form the third contact pads. The third contact pads may beformed to have a thickness of between about 0.5 μm and about 7 μm, suchas about 45 μm.

FIG. 7 illustrates an encapsulation of the first semiconductor device601, the second semiconductor device 603, and the vias 401. Theencapsulation may be performed in a molding device (not individuallyillustrated in FIG. 7), which may comprise a top molding portion and abottom molding portion separable from the top molding portion. When thetop molding portion is lowered to be adjacent to the bottom moldingportion, a molding cavity may be formed for the carrier substrate 101,the vias 401, the first semiconductor device 601, and the secondsemiconductor device 603.

During the encapsulation process the top molding portion may be placedadjacent to the bottom molding portion, thereby enclosing the carriersubstrate 101, the vias 401, the first semiconductor device 601, and thesecond semiconductor device 603 within the molding cavity. Onceenclosed, the top molding portion and the bottom molding portion mayform an airtight seal in order to control the influx and outflux ofgasses from the molding cavity. Once sealed, an encapsulant 701 may beplaced within the molding cavity. The encapsulant 701 may be a moldingcompound resin such as polyimide, PPS, PEEK, PES, a heat resistantcrystal resin, combinations of these, or the like. The encapsulant 701may be placed within the molding cavity prior to the alignment of thetop molding portion and the bottom molding portion, or else may beinjected into the molding cavity through an injection port.

Once the encapsulant 701 has been placed into the molding cavity suchthat the encapsulant 701 encapsulates the carrier substrate 101, thevias 401, the first semiconductor device 601, and the secondsemiconductor device 603, the encapsulant 701 may be cured in order toharden the encapsulant 701 for optimum protection. While the exactcuring process is dependent at least in part on the particular materialchosen for the encapsulant 701, in an embodiment in which moldingcompound is chosen as the encapsulant 701, the curing could occurthrough a process such as heating the encapsulant 701 to between about100° C. and about 130° C., such as about 125° C. for about 60 sec toabout 3000 sec, such as about 600 sec. Additionally, initiators and/orcatalysts may be included within the encapsulant 701 to better controlthe curing process.

However, as one having ordinary skill in the art will recognize, thecuring process described above is merely an exemplary process and is notmeant to limit the current embodiments. Other curing processes, such asirradiation or even allowing the encapsulant 701 to harden at ambienttemperature, may alternatively be used. Any suitable curing process maybe used, and all such processes are fully intended to be included withinthe scope of the embodiments discussed herein.

FIG. 8 illustrates a thinning of the encapsulant 701 in order to exposethe vias 401, the first semiconductor device 601, and the secondsemiconductor device 603 for further processing. The thinning may beperformed, e.g., using a mechanical grinding or CMP process wherebychemical etchants and abrasives are utilized to react and grind away theencapsulant 701, the first semiconductor device 601 and the secondsemiconductor device 603 until the vias 401, the first contact pads (onthe first semiconductor device 601), and the second contact pads (on thesecond semiconductor device 603) have been exposed. As such, the firstsemiconductor device 601, the second semiconductor device 603, and thevias 401 may have a planar surface that is also planar with theencapsulant 701.

However, while the CMP process described above is presented as oneillustrative embodiment, it is not intended to be limiting to theembodiments. Any other suitable removal process may alternatively beused to thin the encapsulant 701, the first semiconductor device 601,and the second semiconductor device 603 and expose the vias 401. Forexample, a series of chemical etches may alternatively be utilized. Thisprocess and any other suitable process may alternatively be utilized tothin the encapsulant 701, the first semiconductor device 601, and thesecond semiconductor device 603, and all such processes are fullyintended to be included within the scope of the embodiments.

FIG. 9 illustrates a formation of a redistribution layer (RDL) 901 inorder to interconnect the first semiconductor device 601, the secondsemiconductor device 603, the vias 401 and third external connectors1001 (not illustrated in FIG. 9 but illustrated and described below withrespect to FIG. 10). By using the RDL 901 to interconnect the firstsemiconductor device 601 and the second semiconductor device 603, thefirst semiconductor device 601 and the second semiconductor device 603may have a pin count of greater than 1000.

In an embodiment the RDL 901 may be formed by initially forming a seedlayer (not shown) of a titanium copper alloy through a suitableformation process such as CVD or sputtering. A photoresist (also notshown) may then be formed to cover the seed layer, and the photoresistmay then be patterned to expose those portions of the seed layer thatare located where the RDL 901 is desired to be located.

Once the photoresist has been formed and patterned, a conductivematerial, such as copper, may be formed on the seed layer through adeposition process such as plating. The conductive material may beformed to have a thickness of between about 1 μm and about 10 μm, suchas about 5 μm, and a width along the first substrate 102 of betweenabout 5 μm and about 300 μm, such as about 5 μm. However, while thematerial and methods discussed are suitable to form the conductivematerial, these materials are merely exemplary. Any other suitablematerials, such as AlCu or Au, and any other suitable processes offormation, such as CVD or PVD, may alternatively be used to form the RDL901.

Once the conductive material has been formed, the photoresist may beremoved through a suitable removal process such as ashing. Additionally,after the removal of the photoresist, those portions of the seed layerthat were covered by the photoresist may be removed through, forexample, a suitable etch process using the conductive material as amask.

FIG. 9 also illustrates a formation of a third passivation layer 903over the RDL 901 in order to provide protection and isolation for theRDL 901 and the other underlying structures. In an embodiment the thirdpassivation layer 903 may be polybenzoxazole (PBO), although anysuitable material, such as polyimide or a polyimide derivative, mayalternatively be utilized. The third passivation layer 903 may be placedusing, e.g., a spin-coating process to a thickness of between about 5 μmand about 25 μm, such as about 7 μm, although any suitable method andthickness may alternatively be used.

In an embodiment the thickness of the structure from the thirdpassivation layer 903 to the polymer layer 105 may be less than or equalto about 200 μm. By making this thickness as small as possible, theoverall structure may be utilized in varying small size applications,such as cell phones and the like, while still maintaining the desiredfunctionality. However, as one of ordinary skill in the art willrecognize, the precise thickness of the structure may be dependent atleast in part upon the overall design for the unit and, as such, anysuitable thickness may alternatively be utilized.

FIG. 10 illustrates a formation of the third external connectors 1001 tomake electrical contact with the RDL 901. In an embodiment after thethird passivation layer 903 has been formed, an opening may be madethrough the third passivation layer 903 by removing portions of thethird passivation layer 903 to expose at least a portion of theunderlying RDL 901. The opening allows for contact between the RDL 901and the third external connectors 1001. The opening may be formed usinga suitable photolithographic mask and etching process, although anysuitable process to expose portions of the RDL 901 may be used.

In an embodiment the third external connectors 1001 may be placed on theRDL 901 through the third passivation layer 903 and may comprise aeutectic material such as solder, although any suitable materials mayalternatively be used. In an embodiment in which the third externalconnectors 1001 are solder balls, the third external connectors 1001 maybe formed using a ball drop method, such as a direct ball drop process.Alternatively, the solder balls may be formed by initially forming alayer of tin through any suitable method such as evaporation,electroplating, printing, solder transfer, and then performing a reflowis preferably performed in order to shape the material into the desiredbump shape.

At this stage, a circuit probe test may be performed in order to checkfor defective or packages. In an embodiment of the circuit probe testone or more probes (not individually illustrated) are electricallyconnected to the third external connectors 1001 and signals are sentinto the third external connectors 1001 and into, e.g., the firstsemiconductor device 601 and the second semiconductor device 603. Ifthere are no significant defects, the probes will receive apredetermined output from the third external connectors 1001, anddefective structures can be identified. Once identified, defectivestructures can be removed prior to further processing in order to makethe overall process more efficient.

FIG. 11 illustrates a debonding of the carrier substrate 101 from thefirst semiconductor device 601 and the second semiconductor device 603.In an embodiment the third external connectors 1001 and, hence, thestructure including the first semiconductor device 601 and the secondsemiconductor device 603, may be attached to a ring structure 1101. Thering structure 1101 may be a metal ring intended to provide support andstability for the structure during and after the debonding process. Inan embodiment the third external connectors 1001, the firstsemiconductor device 601, and the second semiconductor device 603 areattached to the ring structure using, e.g., a ultraviolet tape, althoughany other suitable adhesive or attachment may alternatively be used.

Once the third external connectors 1001 and, hence, the structureincluding the first semiconductor device 601 and the secondsemiconductor device 603 are attached to the ring structure 1101, thecarrier substrate 101 may be debonded from the structure including thefirst semiconductor device 601 and the second semiconductor device 603using, e.g., a thermal process to alter the adhesive properties of theadhesive layer 103. In a particular embodiment an energy source such asan ultraviolet (UV) laser, a carbon dioxide (CO₂) laser, or an infrared(IR) laser, is utilized to irradiate and heat the adhesive layer 103until the adhesive layer 103 loses at least some of its adhesiveproperties. Once performed, the carrier substrate 101 and the adhesivelayer 103 may be physically separated and removed from the structurecomprising the third external connectors 1001, the first semiconductordevice 601, and the second semiconductor device 603.

FIG. 12 illustrates that, once the carrier substrate 101 and theadhesive layer 103 have been removed to expose the polymer layer 105,the polymer layer 105 may be patterned in order to expose the vias 401and also the TSVs 605 within the first semiconductor device 601. In anembodiment the polymer layer 105 may be patterned using, e.g., a laserdrilling method, by which a laser is directed towards those portions ofthe polymer layer 105 which are desired to be removed in order to exposethe underlying RDL 901 or vias 401. In an embodiment the patterning maybe formed to form first openings 1201 over the vias 401 to have a firstwidth of between about 100 μm and about 300 μm, such as about 200 μm,and also to form second openings 1203 over the first semiconductordevice 601 to have a second width of between about 15 μm and about 30μm, such as about 20 μm.

Alternatively, the polymer layer 105 may be patterned by initiallyapplying a photoresist (not individually illustrated in FIG. 12) to thepolymer layer 105 and then exposing the photoresist to a patternedenergy source (e.g., a patterned light source) so as to induce achemical reaction, thereby inducing a physical change in those portionsof the photoresist exposed to the patterned light source. A developer isthen applied to the exposed photoresist to take advantage of thephysical changes and selectively remove either the exposed portion ofthe photoresist or the unexposed portion of the photoresist, dependingupon the desired pattern, and the underlying exposed portion of thepolymer layer 105 are removed with, e.g., a dry etch process. However,any other suitable method for patterning the polymer layer 105 mayalternatively be utilized.

FIG. 13 illustrates a placement and bonding of a third semiconductordevice 1301 to the first semiconductor device 601 through the polymerlayer 105. In an embodiment the third semiconductor device 1301 is usedto work in conjunction with the first semiconductor device 601 and thesecond semiconductor device 603 in order to provide the desiredfunctionality to the end user.

In a particular embodiment the third semiconductor device 1301 may be amemory device that may be used to provide stored data to either or bothof the first semiconductor device 601 and the second semiconductordevice 603. In such an embodiment the first semiconductor device 601 maycomprise a memory control unit (not individually illustrated in FIG. 13)that provides a control functionality to the third semiconductor device1301 in addition to other functionalities provided by the firstsemiconductor device 601. However, in other embodiments the thirdsemiconductor device 1301 may comprise its own memory control unit.

In a particular embodiment in which the third semiconductor device 1301is a memory device, the third semiconductor device 1301 may be a memorydevice with a high rate of data transfer, such as having a first rate ofdata transfer of between about 0.2 Gb/s and about 3.2 Gb/s, such asabout 0.8 Gb/s. For example, the third semiconductor device 1301 may bea wide I/O RAM which has a large number of I/O interfaces, such asgreater than 256 interfaces, so that a large bandwidth of data into andout of the third semiconductor device 1301 may be realized even at lowerclock speeds. As such, the third semiconductor device 1301 may be usedas a high-speed cache memory for the first semiconductor device 601while helping to reduce the overall temperature of the firstsemiconductor device 601 and the second semiconductor device 603.However, the third semiconductor device 1301 may alternatively be anysuitable type of memory device with a high rate of data transfer, suchas an LPDDRn memory device or the like, that has a high rate of datatransfer into and out of the third semiconductor device 1301.

In addition, because the second semiconductor device 603 has the TSVs605, the third semiconductor device 1301 may also be used as a cachememory for the second semiconductor device 603 as well. In particular,the third semiconductor device 1301, under the control of the firstsemiconductor device 601, may output signals to the TSVs 605 locatedwithin the first semiconductor device 601, through the RDL 901, and tothe second semiconductor device 603. By using the TSVs 605, a shorterand quicker path may be utilized to get the data from the thirdsemiconductor device 1301 to the second semiconductor device 603,thereby making the overall device faster and more efficient.

In an embodiment the third semiconductor device 1301 comprises a thirdsubstrate, third active devices (such as an array of DRAM devices),third metallization layers, and third contact pads (all of which are notillustrated in FIG. 13 for clarity), which may be similar to the firstsubstrate, the first active devices, the first metallization layers, andthe first contact pads (described above with respect to FIG. 6). In anembodiment the third semiconductor device 1301 also comprises fourthexternal connections 1303 which may be formed as part of the thirdsemiconductor device 1301 to provide connectivity between the thirdsemiconductor device 1301 and the first semiconductor device 601. In anembodiment the fourth external connections 1303 may be, e.g., a copperpillar or copper post. However, the embodiments are not limited tothese, and may alternatively be solder bumps, copper bumps, or othersuitable fourth external connections 1303 that may be made to provideelectrical connection. All such external contacts are fully intended tobe included within the scope of the embodiments.

In an embodiment in which the fourth external connections 1303 arecopper pillars, the fourth external connections 1303 may be formed byinitially forming a seed layer (not individually illustrated in FIG. 13)over the seed layer. The seed layer is a thin layer of a conductivematerial that aids in the formation of a thicker layer during subsequentprocessing steps, and may comprise a layer of titanium about 500 Å thickfollowed by a layer of copper about 3,000 Å thick. The seed layer may becreated using processes, such as sputtering, evaporation, or PECVDprocesses, depending upon the desired materials to a thickness ofbetween about 0.1 μm and about 1 μm, such as about 0.3 μm.

The fourth external connections 1303 comprise one or more conductivematerials, such as copper, tungsten, other conductive metals, or thelike, and may be formed, for example, by electroplating, electrolessplating, or the like. In an embodiment, an electroplating process isused wherein the third semiconductor device 1301 is submerged orimmersed in an electroplating solution. The third semiconductor device1301 surface is electrically connected to the negative side of anexternal DC power supply such that the third semiconductor device 1301functions as the cathode in the electroplating process. A solidconductive anode, such as a copper anode, is also immersed in thesolution and is attached to the positive side of the power supply. Theatoms from the anode are dissolved into the solution, from which thecathode, e.g., the third semiconductor device 1301, acquires thedissolved atoms, thereby plating the exposed conductive areas of thethird semiconductor device 1301, e.g., the exposed portions of the seedlayer within the openings.

Once the fourth external connections 1303 have been formed, the thirdsemiconductor device 1301 may be bonded to the first semiconductordevice 601 by initially aligning the fourth external connections 1303with the openings through the third passivation layer 903 and placingthe fourth external connections 1303 in physical contact with the RDLlayer 901. Once in contact, the fourth external connections 1303 may bebonded to the first semiconductor device 601 using a process such asthermo-compression bonding. Any suitable method of bonding, however,such as copper-copper bonding, may alternatively be utilized to bond thefirst semiconductor device 601 to the third semiconductor device 1301.

FIG. 14 illustrates a singulation of one section comprising a first oneof the first semiconductor devices 601 and a first one of the secondsemiconductor devices 603 from a second section comprising a second oneof the first semiconductor devices 601 and a second one of the secondsemiconductor devices 603. In an embodiment the singulation may beperformed by using a saw blade (not shown) to slice through theencapsulant 701 and the polymer layer 105 between the vias 401, therebyseparating one section from another to form a first package 1401 withthe third semiconductor device 1301 connected to the first package 1401.

However, as one of ordinary skill in the art will recognize, utilizing asaw blade to singulate the first package 1401 is merely one illustrativeembodiment and is not intended to be limiting. Alternative methods forsingulating the first package 1401, such as utilizing one or more etchesto separate the first package 1401, may alternatively be utilized. Thesemethods and any other suitable methods may alternatively be utilized tosingulate the first package 1401.

FIG. 15 illustrates a bonding of a second package 1501 to the firstpackage 1401. In an embodiment the second package 1501 may be a packagecomprising a fourth semiconductor device 1503 and a fifth semiconductordevice 1505 bonded on a packaging substrate 1507 using, e.g., a wirebonding technique. In an embodiment each of the fourth semiconductordevice 1503 and the fifth semiconductor device 1505 may comprise asubstrate, active devices, metallization layers, and contact pads, andthese elements may be similar to the first substrate, first activedevices, first metallization layers, and first contact pads describedabove with respect to the first semiconductor device 601.

In an particular embodiment the fourth semiconductor device 1503 and thefifth semiconductor device 1505 are devices that will be connected tothe first package 1401 so that the fourth semiconductor devices 1503 andthe fifth semiconductor device 1505 are used in conjunction with thefirst semiconductor device 601 and the second semiconductor device 603to provide the desired functionality. In a particular embodiment thefourth semiconductor device 1503 and the fifth semiconductor device 1505are memory devices that can be used to receive and supply data signalsto and from the first semiconductor device 601 and the secondsemiconductor device 603.

Additionally, in an embodiment in which the third semiconductor device1301 provides a high rate of data transfer, the fourth semiconductordevice 1503 and the fifth semiconductor device 1505 may provide a lowerrate of data transfer than the third semiconductor device 1301. In aparticular embodiment in which the third semiconductor device 1301 is awide I/O RAM or LPDDRn memory device, the fourth semiconductor device1503 and the fifth semiconductor device 1505 may be a LPDDR memorydevice or a NAND flash memory device, although any other suitable typeof memory device may alternatively be utilized.

For example, in an embodiment in which the third semiconductor device1301 provides the first bandwidth of about 51.2 GB/s, the fourthsemiconductor device 1503 and the fifth semiconductor device 1505 mayprovide a second bandwidth of between about 6.4 GB/s and about 25.6GB/s, such as about 12.8 GB/s. As such, the fourth semiconductor device1503 and the fifth semiconductor device 1505 can be used to store datawhere speed requirements may be more relaxed while the overall systemcan maintain desired high speeds by choosing (through the controller inthe first semiconductor device 601) to store more speed sensitive datain the third semiconductor device 1301.

However, while the fourth semiconductor device 1503 and the fifthsemiconductor device 1505 may have a second rate of data transfer thatis lower than the first bandwidth, in an embodiment the fourthsemiconductor device 1503 and the fifth semiconductor device 1505 alsohave a larger memory capacity than the third semiconductor device 1301.For example, in an embodiment in which the third semiconductor device1301 has a first capacity of between about 128 KB and about 16 MB, suchas about 256 KB, the fourth semiconductor device 1503 and the fifthsemiconductor device 1505 (collectively) have a second capacity that islarger than the first capacity, such as by being between about 1 GB andabout 16 GB, such as about 2 GB. As such, during operation the firstsemiconductor device 601 can utilize the best aspects of the thirdsemiconductor device 1301 (e.g., speed), the fourth semiconductor device1503 (e.g., capacity), and the fifth semiconductor device 1505 (e.g.,capacity) in order to most efficiently utilize the various resources foran overall more efficient device.

In an embodiment the fourth semiconductor device 1503 and the fifthsemiconductor device 1505 may be physically bonded together, and both ofthem may be bonded to the packaging substrate 1507. In an embodiment thepackaging substrate 1507 includes one or more layers of a non-conductivematerial, such as a copper clad laminate (CCL) comprising a glass fabricthat is coated with electrically insulating resin and is sandwichedbetween two copper foils, bismaleimide triazine (BT) resin, anepoxy-based resin, or a laminated material such as Ajinomoto Build-upFilm (ABF) lamination by Ajinomoto, as examples. Alternatively, thepackaging substrate 1507 may include other materials. The packagingsubstrate 1507 may include one or more redistribution layers (RDLs)having conductive wiring formed therein, not shown. The RDLs may includefan-out wiring that provides horizontal connections for the package insome embodiments, not shown. In some embodiments, an RDL is not includedin the packaging substrate 1507.

Once the fourth semiconductor device 1503 and the fifth semiconductordevice 1505 have been physically bonded to the packaging substrate 1507,the fourth semiconductor device 1503 and the fifth semiconductor device1505 may be electrically connected to the packaging substrate 1507. Inan embodiment the fourth semiconductor device 1503 and the fifthsemiconductor device 1505 may be electrically connected through, e.g., awire bonding process whereby contact pads on the fourth semiconductordevice 1503 and the fifth semiconductor device 1505 are connected tocontact pads on the packaging substrate 1507. However, any suitablemethod of electrically connecting the fourth semiconductor device 1503and the fifth semiconductor device 1505 to the packaging substrate 1507,such as a flip-chip arrangement, may also be utilized.

Once connected, the fourth semiconductor device 1503 and the fifthsemiconductor device 1505 may be encapsulated with a second encapsulant1511. In an embodiment the fourth semiconductor device 1503 and thefifth semiconductor device 1505 may be encapsulated in a method similarto the encapsulation of the first semiconductor device 601 and thesecond semiconductor device 603 (described above with respect to FIG.7). However, the fourth semiconductor device 1503 and the fifthsemiconductor device 1505 may also be encapsulated in a differentmethod.

In an embodiment the second package 1501 comprises fifth externalconnections 1509 to provide connectivity between the second package 1501and the first package 1401 through the vias 401. The fifth externalconnections 1509 may be contact bumps such as microbumps or controlledcollapse chip connection (C4) bumps and may comprise a material such astin, or other suitable materials, such as silver or copper. In anembodiment in which the fifth external connections 1509 are tin solderbumps, the fifth external connections 1509 may be formed by initiallyforming a layer of tin through any suitable method such as evaporation,electroplating, printing, solder transfer, ball placement, etc, to apreferred thickness of about 100 μm. Once a layer of tin has been formedon the structure, a reflow is preferably performed in order to shape thematerial into the desired bump shape.

Once the fifth external connections 1509 have been formed, the secondpackage 1501 may be bonded to the first package 1401 by initiallyaligning the fifth external connections 1509 with the openings throughthe third passivation layer 903 that expose the vias 401 and placing thefifth external connections 1509 in physical contact with the vias 401.Once in contact, a reflow may be performed to reflow the material of thefifth external connections 1509 and bond to the vias 401. Any suitablemethod of bonding, however, such as copper-copper bonding, mayalternatively be utilized to bond the second package 1501 to the firstpackage 1401.

In operation, the first semiconductor device 601 may be used to controlthe storing and retrieval of data from the third semiconductor device1301 and the second package 1501. For example, for a first data setwhere it is desirable to store and retrieve such data quickly, the firstsemiconductor device 601 may decide to store such data within the thirdsemiconductor device 1301. In contrast, for a second data set, in whichspeed may not be as critical, the first semiconductor device 601 maymake the decision to store and retrieve the second data set in thesecond package 1501. This allows the first semiconductor device 601 toefficiently route and control the storage and retrieval of data into andout of a memory device.

FIGS. 16A-16C illustrate additional embodiments of the chip on packageconfiguration. FIG. 16A illustrates an embodiment similar to theembodiment described above with respect to FIG. 15. However, in additionto the third semiconductor device 1301 being located between the firstpackage 1401 and the second package 1501, a sixth semiconductor device1601 is additionally connected to the second semiconductor device 603between the first package 1401 and the second package 1501.

In this embodiment the sixth semiconductor device 1601 may be similar tothe third semiconductor device 1301, such as by being a wide I/O RAM ora LPDDRn memory device with a capacity of between about 128 KB and about16 MB, such as about 256 KB. The sixth semiconductor device 1601 may beconnected to the second semiconductor device 603 in a similar fashion asthe third semiconductor device 1301 is connected to the firstsemiconductor device 601 (e.g., by laser drilling openings through thepolymer layer 105 and then bonding the sixth semiconductor device 1601to the second semiconductor device 603 through the polymer layer 105.However, in this embodiment, in addition to receiving signals from thethird semiconductor device 1301, the second semiconductor device 603 mayalso receive high-speed signals directly from the sixth semiconductordevice 1601, thereby allowing an even more efficient distribution ofstorage functions.

FIG. 16B illustrates another embodiment in which, instead of having asingle third semiconductor device 1301 attached to the firstsemiconductor device 601, a plurality of the third semiconductor devices1301 in a die stack configuration are attached to the firstsemiconductor device 601. In this embodiment the plurality of thirdsemiconductor devices 1301 may be interconnected with each other and tothe first semiconductor device 601 using, e.g., second through substratevias 1603 that extend through the various third semiconductor devices1301 so that power, ground and signals may be passed between theplurality of third semiconductor devices 1301 as well as passed betweenthe plurality of third semiconductor devices 1301 and the firstsemiconductor device 601. In an embodiment the second TSVs 1603 may beformed in a similar manner as the TSVs 605 within the firstsemiconductor device 601 (as described above with respect to FIG. 6),although the second TSVs 1603 may alternatively be formed in a differentmanner than the TSVs 605.

FIG. 16C illustrates an embodiment similar to the embodiment describedabove with respect to FIG. 16B, in which a plurality of thirdsemiconductor devices 1301 are stacked together and connected to thefirst semiconductor device 601. In this embodiment, however, in additionto the plurality of third semiconductor device 1301, the sixthsemiconductor device 1601 is additionally connected to the secondsemiconductor device 603 as described above with respect to FIG. 16A.

By packaging semiconductor devices as provided in the above paragraphs,communication speeds from an application processor to a memory can beimproved with a low cost process. Additionally, the first package 1401,which is in an Integrated fan out package (InFO) configuration, can be a“Known-Good-Package,” which is better than the application processor ina 3D-IC with TSV configuration. This also provides for a smaller formfactor than a flip chip package on package (FC_POP) confiugration,similar to 3D-IC, and provides more high-speed for applicationprocessor. Finally, this process and structure reduces the total numberof components and enhances the reliability.

In accordance with an embodiment, a method for packaging semiconductordevices method comprising forming vias over a carrier wafer andattaching a first die over the carrier wafer, the first die comprising aplurality of through silicon vias, is provided. A second die is attachedover the carrier wafer, and the first die, the second die, and the viasare encapsulated to form a first package. The carrier wafer is removed,and a third die is connected to a first side of the first package,wherein the third die is electrically connected to the plurality ofthrough silicon vias. A second package is connected to the first side ofthe first package, wherein the third die is located between the firstdie and the second die.

In accordance with another embodiment, a method of manufacturing asemiconductor device comprising connecting a first semiconductor deviceto a first package is provided. The first package comprises a secondsemiconductor device, the second semiconductor device comprising aplurality of through silicon vias, wherein the first semiconductordevice is located over the second semiconductor device; a thirdsemiconductor device, wherein the third semiconductor device iselectrically connected to the second semiconductor device and does nothave a through silicon via; an encapsulant encapsulating the secondsemiconductor device and the third semiconductor device; and viasextending all of the way through the encapsulant. A second package isconnected to the vias, wherein the second package is over the firstsemiconductor device and the second semiconductor device.

In accordance with yet another embodiment, a semiconductor devicecomprising a first semiconductor device with through silicon vias,wherein the first semiconductor device has a first height, and a secondsemiconductor device without through silicon vias, and vias having asecond height at least as large as the first height is provided. Aredistribution layer is in electrical connection with the firstsemiconductor device, the second semiconductor device, and the vias. Athird semiconductor device is over the first semiconductor device, thethird semiconductor device comprising electrical connections connectedto the through silicon vias, and a package is connected to the vias,wherein the third semiconductor device is located between the firstsemiconductor device and the package.

Although the present invention and its advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by the appended claims. For example,the various chips may provide any suitable or desired functionalityalternatively to the functionalities described herein.

Moreover, the scope of the present application is not intended to belimited to the particular embodiments of the process, machine,manufacture, composition of matter, means, methods and steps describedin the specification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present invention, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present invention. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, or steps.

What is claimed is:
 1. A method of manufacturing a semiconductor device, the method comprising: encapsulating a first semiconductor device, a second semiconductor device, and a via with an encapsulant; planarizing the encapsulant to expose the first semiconductor device and the via; and electrically connecting a third semiconductor device to the second semiconductor device through the first semiconductor device and a redistribution layer, the redistribution layer being located on an opposite side of the first semiconductor device than the third semiconductor device, wherein the first semiconductor device comprises through vias electrically connecting the third semiconductor device to the redistribution layer; and electrically connecting a fourth semiconductor die located over the second semiconductor device, wherein the fourth semiconductor die comprises a memory with a data transfer rate less than the third semiconductor device.
 2. The method of claim 1, wherein the first semiconductor device is a 28 nm node device and the second semiconductor device is a 16 nm node device.
 3. The method of claim 1, wherein the third semiconductor device is a memory device.
 4. The method of claim 3, wherein the memory device has a data transfer rate of between about 0.2 Gb/s and about 3.2 Gb/s.
 5. The method of claim 3, wherein the memory device is a cache memory for the second semiconductor device.
 6. The method of claim 1, wherein the fourth semiconductor die has a bandwith of between about 6.4 GB/s and about 25.6 GB/s.
 7. The method of claim 1, wherein the third semiconductor device is a LPDDRn memory device.
 8. The method of claim 1, wherein the second semiconductor device has a hybrid configuration.
 9. A method of manufacturing a semiconductor device, the method comprising: forming at least one via over a substrate; placing a first semiconductor device adjacent to the at least one via; placing second semiconductor device adjacent to the first semiconductor device; placing an encapsulant around the at leasst one via, the first semiconductor device, and the second semiconductor device; exposing the at least one via and the first semiconductor device; electrically connecting the at least one via, the first semiconductor device, and the second semiconductor device with a redistribution layer; and physically attaching a third semiconductor device to the first semiconductor device, wherein the third semiconductor device is electrically connected to the redistribution layer through second vias, the second vias extending through the first semiconductor device.
 10. The method of claim 9, wherein the second semiconductor device has a first operating speed, the first semiconductor device has a second operating speed, and the first operating speed is larger than the second operating speed.
 11. The method of claim 9, wherein the third semiconductor device is an LPDDRn memory device.
 12. The method of claim 9, further comprising connecting a fourth semiconductor device to the at least one via.
 13. The method of claim 12, wherein the fourth semiconductor device is an LPDDR memory device.
 14. The method of claim 13, wherein the LPDDR memory device has a bandwidth of between about 6.4 GB/s and about 25.6 GB/s.
 15. The method of claim 9, further comprising: connecting a fourth semiconductor device to the at least one via; and connecting a fifth semiconductor device to the fourth semiconductor device and the at least one via.
 16. The method of claim 15, wherein both of the fourth semiconductor device and the fifth semiconductor device has a capacity larger than the third semiconductor device.
 17. A method of manufacturing a semiconductor device, the method comprising: forming an integrated fan out package, the integrated fan out package comprising a first semiconductor device, a second semiconductor device, and a via, the via having a first height at least as large as a second height of the first semiconductor device; attaching a third semiconductor device to the integrated fan out package, wherein the third semiconductor device is onnected to the second semiconductor device by though vias located within the first semiconductor device; and attaching a fourth semiconductor device to the integrated fan out package, the fourth semiconductor device having a first bandwidth, wherein the third semiconductor device has a second bandwidth greater than the first bandwidth.
 18. The method of claim 17, wherein the first semiconductor device has a hybrid configuration.
 19. The method of claim 18, wherein the hybrid configuration comprises an analog region and a digital region.
 20. The method of claim 17, wherein the second bandwidth is about 51.2 GB/s and the first bandwidth is between about 6.4 GB/s and about 25.6 GB/s. 